Samsung 1TB 850 Evo M.2 Solid State Drive MZ-N5E1T0BW

Model : MZ-N5E1T0BW

Key Features

• Sequential Read Speed: Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration
• Sequential Write Speed: 520
• Random Read Speed: Random Read (4KB, QD32): Up to 97,000 IOPS Random Read* Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read
• Random Write Speed Random Write (4KB, QD32): Up to 89,000 IOPS Random Write* Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write
• Memory Speed: Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3
• Controller: Samsung MGX Controller
• Trim Support: Yes
• AES Encryption: AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
• S.M.A.R.T. Support: Yes
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• WWN Support: World Wide Name supported
• Device Sleep Mode Support: Yes
• Internal Storage: Yes
• Temperature proof: Yes

General

• Power Consumption (W): 50 mW* Actual power consumption may vary depending on system hardware & configurationAverage: 2.2 Watts *Maximum: 2.7 Watts (Burst mode)
• Reliability (MTBF): 1.5 million hrs Reliability (MTBF)
• Interface: SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

Environmental Specs

• Operating Temperature: 32 - 158
• Shock: 1,500G & 0.5ms (Half sine)

Storage

• Capacity: 1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Dimensions (W x D x H)

• 3.16" x 0.87" x 0.09"

Weight

• 0.32

Software

• Management SW: Magician Software